THIN FILM TRANSISTOR MANUFACTURING METHOD AND THIN FILM DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a thin film transistor manufacturing method and a thin film device, which can ensure capacitance for maintaining brightness of an organic EL light-emission part constant and achieve improvement in a pixel density and simplification of manufacturing while reducing unnecessary parasitic capacitance when a self-aligned thin film TFT is manufactured.SOLUTION: A manufacturing method of a driving TFT for controlling drive of a current flowing in an organic EL light-emission part comprises: layering a gate electrode film 2, a gate insulation film 3 and an oxide semiconductor layer (IGZO film 4) on a substrate 1 in this order to form a bottom-gate thin film transistor element structure; irradiating predetermined light from the substrate 1 side toward the IGZO film 4 to make a region of the IGZO film 4 low resistance, which does not overlap the gate electrode film 2 on a sight line when viewed from the substrate 1 side; and subsequently forming a source electrode film 7a so as to overlap with the gate electrode film 2 on the sight line and forming a drain electrode film 7b so as not to overlap with the gate electrode film 2.