| 摘要 |
PROBLEM TO BE SOLVED: To enable doping of a p-type dopant in a group III nitride semiconductor with good efficiency and achieve a high acceptor concentration to achieve a high hole concentration.SOLUTION: A nitride semiconductor device manufacturing method comprises: forming at least one layer of a group III nitride semiconductor layer having p-type conductivity on an Si substrate or a sapphire substrate by using at least one of epitaxial growth and an ion implantation technique; doping when forming the group III semiconductor layer, Mg as a p-type dopant together with at least one metal element selected from Zn, Li, Au, Ag, Cu, Pt and Pd having formation energy of group III element substitution higher than that of Mg to be introduced into an interstitial site; and removing the metal element from the group III nitride semiconductor layer after activation of Mg as an acceptor to make a concentration of the metal element be 1/100 and under of a concentration of Mg thereby to achieve a hole concentration of 10-10cmand over. |
