使用半导体背面用切割带一体型膜之半导体装置之制造方法,申请号TW100125509-传众专利搜索

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发明名称	使用半导体背面用切割带一体型膜之半导体装置之制造方法
摘要
申请公布号	TWI437071	申请公布日期	2014.05.11
申请号	TW100125509	申请日期	2011.07.19
申请人	日东电工股份有限公司日本	发明人	高本尚英;志贺豪士;浅井文辉
分类号	C09J7/02;H01L21/304	主分类号	C09J7/02
代理机构		代理人	陈长文台北市松山区敦化北路201号7楼
主权项
地址	日本

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