| 摘要 |
Disclosed are an epitaxial wafer which includes: an epitaxial structure with a substrate; a first epitaxial layer formed on the substrate; a second epitaxial layer formed on the first epitaxial layer; and a third epitaxial layer formed on the second epitaxial layer. The epitaxial structure is doped with an n-type or a p-type. The doping concentration for a boundary surface between the first epitaxial layer and the second epitaxial layer is different from the doping concentration for a boundary between the second epitaxial layer and the third epitaxial layer, and a method for fabricating the same. |
