发明名称 EPITAXIAL WAFER AND METHOD FOR FABRICATING THE SAME
摘要 The present invention relates to an epitaxial wafer which includes an epitaxial structure including a substrate, a first epitaxial layer on the substrate, and a second epitaxial layer on the first epitaxial layer. The first epitaxial layer has the same composition as the second epitaxial layer.
申请公布号 KR20140055335(A) 申请公布日期 2014.05.09
申请号 KR20120122004 申请日期 2012.10.31
申请人 LG INNOTEK CO., LTD. 发明人 KANG, SEOK MIN
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
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