ALL-IN-ONE POWER SEMICONDUCTOR MODULE

摘要

The present invention relates to an integrated power semiconductor module comprising a plurality of first semiconductor devices which is formed on a substrate; a molded housing to include a bridge which crosses the upper part of the first semiconductor devices; and a plurality of lead members which is integrally formed on the housing and electrically connects the first semiconductor devices and the substrate. The present invention solves a reliability issue by increasing a bonding area and a bonding strength of the semiconductor devices. The present invention improves fairness and reduces defects by the step adjustment according to the alignment of the semiconductor devices and the height of the semiconductor devices as well as reduces a process time by omitting a wire bonding process.