发明名称 SEMICONDUCTOR DEVICE
摘要 <p>The present invention relates to a semiconductor device capable of reducing resistance due to a routing path and reducing heat generated due to the use of a large amount of power by connecting rewiring to source and drain of a power integrated circuit (IC). The semiconductor device comprises a substrate including a device region and a peripheral region surrounding the device region, a first wiring including one or more first conductive lines formed to extend in a first direction on the substrate, a second wiring including one or more second conductive lines formed to extend in the first direction on the substrate such that the second wiring is spaced apart from the first wiring, first and second conductive plates formed to be spaced apart from each other on the first and second wirings, respectively, one or more first vias connecting the first conductive lines and the first conductive plate, respectively, and one or more second vias connecting the second conductive lines and the second conductive plate, respectively. The first and second vias overlap with the device region and arranged in zigzags, respectively.</p>
申请公布号 KR20140055113(A) 申请公布日期 2014.05.09
申请号 KR20120121472 申请日期 2012.10.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, YONG DON
分类号 H01L21/768;H01L21/28 主分类号 H01L21/768
代理机构 代理人
主权项
地址