| 摘要 |
A method for forming a semiconductor device according to the present invention includes a step of successively forming an etch stop layer, an interlayer dielectric, and a mask layer on a first metal line; a step of forming preliminary holes which expose the interlayer dielectric by patterning the mask layer; a step of forming preliminary contact holes by performing an anisotropic etching process on the interlayer dielectric; a step of performing a flushing process by injecting a gas containing Ar and O2 into the preliminary contact hole; a step of forming contact holes which expose the first metal line by etching the etch stop layer; and a step of forming a metal contact which fills the contact holes. |
