| 摘要 |
Disclosed is an apparatus to treat a substrate. The apparatus to treat a substrate includes: a housing; a chamber located in the housing which has a place inside; a susceptor located on the chamber and which supports the substrate; an upper liner placed facing the upper side of the susceptor within the chamber, which is fixated and assembled with the upper wall of the chamber and has a stronger heat resisting property than the chamber; a side liner which surrounds the susceptor and supports the upper liner; a nozzle which provides process gas to the place located in between the susceptor and the upper liner; a heater located on the bottom of the susceptor separate from the susceptor; a sensor located in between the upper wall of the housing and the upper wall of the chamber; and a susceptor driving unit which vertically moves the susceptor to maintain a constant distance between the upper liner and the susceptor. The sensor measures one of the heights of the upper wall of the chamber, upper liner and upper side of the susceptor, and the susceptor driving unit determines a moving distance of the susceptor based on the data measured through the sensor. |
