METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

The purpose of the present invention is to provide a semiconductor device and a manufacturing method thereof which has a layer having excellent coating quality between a substrate and a metal layer and suppresses that Cu etc which is a component of the metal layer is diffused to the substrate. The manufacturing method of the semiconductor device comprises; a step of attaching a metal catalyst (12a) to the surface of the substrate by dipping the substrate (10) in a liquid including a metal ion; a step of forming an electroless plating layer on the substrate by dipping the substrate in which the metal catalyst is attached in a electroless plating liquid; a step of forming an electroplating layer (16) on the electroless plating layer using the electroless plating layer as a feeding layer by dipping the substrate in an electroplating liquid; and a step of forming a metal layer (18) on the electroplating layer with Cu or Ag. The electroplating layer is formed of a different material with the metal layer.