| 摘要 |
A light emitting device according to an embodiment includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer positioned between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. The active layer includes a plurality of well layers and a plurality of barrier layers with an energy band gap greater than that of the well layers. The well layers and the barrier layers are alternately stacked. The active layer includes a first region adjacent to the first conductivity-type semiconductor layer and a second region positioned on the first region and adjacent to the second conductivity-type semiconductor layer. The first region and the second region include a plurality of well layers and a plurality of barrier layers, respectively. The barrier layers of the first region are doped with a first conductivity-type dopant, and the first region includes a first section in which a doping concentration of the first conductivity-type dopant introduced into the barrier layers increases and a second section in which a doping concentration of the first conductivity-type dopant introduced to the barrier layers decreases. |
