| 摘要 |
<p>PROBLEM TO BE SOLVED: To suppress reduction in a light current when a wide band-gap semiconductor material is used for an intermediate layer in which a quantum dot is embedded.SOLUTION: A quantum-dot-type infrared detector includes a light-detecting portion 13 and a light-emitting portion 11 monolithically formed with the light-detecting portion 13. The light-detecting portion 13 includes at least one quantum dot layer 31 and an intermediate layer 30 including the quantum dot layer 31. The light-detecting portion 13 outputs a light current on the basis of inter-subband transition by infrared rays to be detected of a carrier 51 in a quantum dot of the quantum dot layer 31. In the inter-subband transition, the carrier transits from a ground level 33 to an excitation level 34 of the quantum dot. The light emission energy of the light-emitting portion 11 is more than or equal to the energy difference between the excitation level 34 and a conduction band end of the intermediate layer 30. The light-emitting portion 11 outputs a photon 41 exciting a carrier 52 transited to the excitation level 34 by the inter-subband transition to the conduction band of the intermediate layer 30.</p> |
