发明名称 |
ARRAY AND MOAT ISOLATION STRUCTURES AND METHOD OF MANUFACTURE |
摘要 |
An array or moat isolation structure for eDRAM with heterogeneous deep trench fill and methods of manufacture is provided. The method includes forming a deep trench for a memory array and an isolation region. The method further includes forming a node dielectric on exposed surfaces of the deep trench for the memory array and the isolation region. The method further includes filling remaining portions of the deep trench for the memory array with a metal, and lining the deep trench of the isolation region with the metal. The method further includes filling remaining portions of the deep trench for the isolation region with a material, on the metal within the deep trench for the memory array. The method further includes recessing the metal within the deep trench for the memory array and the isolation region. The metal in the deep trench of the memory array is recessed to a greater depth than the metal in the isolation region. |
申请公布号 |
US2014124952(A1) |
申请公布日期 |
2014.05.08 |
申请号 |
US201414149280 |
申请日期 |
2014.01.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KUSABA NAOYOSHI;KWON OH-JUNG;LI ZHENGWEN;YAN HONGWEN |
分类号 |
H01L29/423;H01L27/108 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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