HIGH TEMPERATURE SUPERFLUIDITY SYSTEM

摘要

A small gap semiconductor system comprises: two parallel semiconductor sheets formed of atomically thin small gap semiconductor, one sheet containing electrons and the other containing holes; a dielectric insulating barrier arranged parallel to and separating the two semiconductor sheets; independent electrical contacts to each of the semiconductor sheets; two dielectric layers above and below the two semiconductor sheets respectively; and two conducting gates sandwiching the two semiconductor sheets and separated from the respective semiconductor sheets by the respective dielectric layers.