| 摘要 |
A plasma processing chamber is provided comprising one or more process gas inlets, one or more exhaust gas outlets, plasma generating hardware configured to generate a process gas plasma in a plasma processing portion of the plasma processing chamber, a wafer processing stage positioned in the plasma processing chamber, and a plasma monitoring probe assembly. The plasma monitoring probe assembly comprises an electrically conductive probe and an insulator sleeve assembly positioned about the electrically conductive probe. The insulator sleeve assembly comprises a plasma-side sleeve portion and a subterranean sleeve portion positioned about distinct portions of a longitudinal probe axis of the electrically conductive probe of the probe assembly. The plasma-side sleeve portion of the insulator sleeve assembly is constructed of material that is more resistant to plasma-based degradation than is the material of the subterranean sleeve portion of the insulator sleeve assembly, while the subterranean sleeve portion of the insulator sleeve assembly is constructed of material that is more electrically resistant than the material of the plasma-side sleeve portion of the insulator sleeve assembly. |
