| 摘要 |
The purpose of the present invention is to increase light extraction efficiency of an ultraviolet light emitting diode. An exemplary ultraviolet light emitting diode (100A) according to an embodiment of the present invention includes: a single crystal sapphire substrate (110A) on which an array of protrusion portions (112) are formed; a buffer layer (120A) of AlN crystal formed on the sapphire substrate; and an ultraviolet light emitting layer (130) that is formed in contact with the buffer layer and that is formed by laminating an n-type conductive layer (132), a recombination layer (134), and a p-type conductive layer (136) in this order from the buffer layer side. The buffer layer includes a pillar array section (124a) in which a plurality of pillars (124) are arrayed, and an integration section (126) in which the pillars are joined with one another. Each pillar extends from each protrusion portion of the sapphire substrate, in a normal line direction of one surface (104) thereof, and is separated from one another in an in-plane direction of the surface, with a gap G being interposed therebetween. Light emitted from the ultraviolet light emitting layer is taken out to outside through the pillar array section of the buffer layer and the sapphire substrate. |
