发明名称 DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES
摘要 A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
申请公布号 US2014127853(A1) 申请公布日期 2014.05.08
申请号 US201213668941 申请日期 2012.11.05
申请人 INTERNATIONAL BUSINESS MACHINES CORP;BAY ZU PRECISION CO., LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CHEN SHUN-MING;HUANG CHIEN-CHIH;DESOUZA JOEL P.;HONG AUGUSTIN J.;KIM JEEHWAN;KU CHIEN-YEH;SADANA DEVENDRA K.;WANG CHUAN-WEN
分类号 H01L31/18 主分类号 H01L31/18
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