发明名称 |
DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES |
摘要 |
A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer. |
申请公布号 |
US2014127853(A1) |
申请公布日期 |
2014.05.08 |
申请号 |
US201213668941 |
申请日期 |
2012.11.05 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP;BAY ZU PRECISION CO., LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN SHUN-MING;HUANG CHIEN-CHIH;DESOUZA JOEL P.;HONG AUGUSTIN J.;KIM JEEHWAN;KU CHIEN-YEH;SADANA DEVENDRA K.;WANG CHUAN-WEN |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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