发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE |
摘要 |
A method of fabricating a semiconductor device is disclosed comprising the steps of: providing a substrate having a first region, a second region and a plurality of gate electrodes which are formed on the first and second regions of the substrate; forming a mask film to expose the first region of the substrate while covering the second region of the substrate, such that the mask film has a negative lateral profile at a boundary between the first and second regions of the substrate; forming sigma trenches in the first region of the substrate by etching the first region of the substrate using the mask film and the gate electrodes as a mask; and forming an epitaxial layer in each of the sigma trenches. |
申请公布号 |
US2014124834(A1) |
申请公布日期 |
2014.05.08 |
申请号 |
US201314017833 |
申请日期 |
2013.09.04 |
申请人 |
FUJIFILM CORPORATION;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE HYUNG-RAE;KATO KEITA;NAKAMURA ATSUSHI;KANG YOOL;HONG SUK-KOO;KIM JAE-HO;LEE DONG-JUN;LEE SI-YOUNG |
分类号 |
H01L21/308;H01L27/092;H01L29/78 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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