发明名称 PLASMA PROCESSING METHOD
摘要 [Problem] For a variable capacitor provided in order to adjust the ratio between external and internal electric power distribution in a capacitively coupled plasma processing device for distributively providing high-frequency electric power to an internal upper electrode and an external upper electrode disposed facing a lower electrode for mounting a substrate, the purpose is to improve the functioning of the variable capacitor as an adjustment knob for controlling the plasma density distribution characteristics or the in-plane profile of processing characteristics. [Solution] The variable-capacitor step selection range of the variable capacitor used in adjusting the ratio between the external and internal electric power distribution in this plasma processing device is extended to the range spanning a lower non-resonance region (LEs) and a higher non-resonance region (HEs), but not including a resonance region (REs), thereby improving the effect of the variable capacitor as an adjustment knob for controlling the plasma density distribution or the in-plane profile of processing characteristics in a radial direction.
申请公布号 WO2014068974(A1) 申请公布日期 2014.05.08
申请号 WO2013JP06428 申请日期 2013.10.30
申请人 TOKYO ELECTRON LIMITED 发明人 KIHARA, YOSHIHIDE;KAWAMATA, MASAYA;HAGA, TOSHIO
分类号 H01L21/3065;H01L21/205;H01L21/31;H05H1/46 主分类号 H01L21/3065
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