MEMORY DEVICES AND METHODS FOR HIGH RANDOM TRANSACTION RATE

摘要

A memory device can include a plurality of double data rate data (DDR) ports, each configured to receive write data and output read data on a same set of data lines independently and concurrently in synchronism with at least a first clock signal; an address port configured to receive address values on consecutive, different transitions of a second clock, each address value corresponding to an access on a different one of the data ports; and a memory array section comprising a plurality of banks, each bank providing pipelined access to storage locations therein.