ZN-SN-O TYPE OXIDE SINTERED BODY AND METHOD FOR PRODUCING SAME

摘要

[Object] Provided are a Zn—Sn—O-based oxide sintered body which is used as a sputtering target or a tablet for vapor deposition and which is resistant to crack formation and the like during film formation, and a method for producing the same. [Solving means] The oxide sintered body is characterized in that tin is contained with an atomic ratio of Sn/(Zn+Sn) being 0.01 to 0.6, an average crystal particle diameter of the sintered body is 4.5μm or less, and a degree of orientation represented by I(222)/[I(222)+I(400)] is 0.52 or more, where I(222) and I(400) represent integrated intensities of the (222) plane and the (400) plane of a Zn2SnO4 phase measured by X-ray diffraction using the CuKαradiation. The oxide sintered body has an improved mechanical strength, so that the oxide sintered body is resistant to breakage during processing of the sintered body and also is resistant to breakage and crack formation during film formation of transparent conductive films when used as a sputtering target or a tablet for vapor deposition.