| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and method facilitating precise control of a processed shape.SOLUTION: A plasma processing apparatus comprises: a chamber; an introduction part; a counter electrode; a high frequency power supply; and a plurality of low frequency power supplies. A substrate electrode is arranged in the chamber, has a substrate which is directly and indirectly placed thereon, and a plurality of electrode element groups. The introduction part introduces a process gas to the chamber. The high frequency power supply outputs a high frequency voltage for ionizing the process gas to generate plasma. The plurality of low frequency power supplies apply a plurality of low frequency voltages having phases different from each other and 20 MHz or less for drawing in ions from the plasma, to the plurality of electrode element groups, respectively.</p> |
