| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has high field effect mobility, high reliability and stable semiconductor characteristics, and provide a semiconductor device manufacturing method.SOLUTION: In a semiconductor device manufacturing method including on a substrate, at least a gate electrode, a gate insulation film, a semiconductor film, a source and drain electrode and a protective film, the semiconductor film contains In (indium), Zn (zinc), Sn (tin) and O (oxygen), and a pressure in a deposition device before deposition when depositing the protective film after deposition of the semiconductor film, is set at not less than 5×10Pa and not more than 5×10Pa. |
