发明名称 CYLINDRICAL INDIUM SPUTTERING TARGET AND PROCESS FOR PRODUCING SAME
摘要 <p>Provided are an indium cylindrical sputtering target capable of providing good film thickness distribution and a method for production thereof. The indium cylindrical target comprises crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered. The method for manufacturing the indium cylindrical target includes the steps of: casting a semi-finished product of an indium cylindrical target integrated with a backing tube; and subjecting the semi-finished product to plastic working in its radial direction, wherein the plastic working is performed with a total thickness reduction rate of at least 10% over its longitudinal direction.</p>
申请公布号 KR20140054169(A) 申请公布日期 2014.05.08
申请号 KR20147005767 申请日期 2013.01.31
申请人 JX NIPPON MINING & METALS CORPORATION 发明人 ENDO YOUSUKE;SUZUKI HIDEYUKI
分类号 C23C14/34 主分类号 C23C14/34
代理机构 代理人
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