发明名称 |
CYLINDRICAL INDIUM SPUTTERING TARGET AND PROCESS FOR PRODUCING SAME |
摘要 |
<p>Provided are an indium cylindrical sputtering target capable of providing good film thickness distribution and a method for production thereof. The indium cylindrical target comprises crystal grains whose average size is 1 mm to 20 mm over its surface to be sputtered. The method for manufacturing the indium cylindrical target includes the steps of: casting a semi-finished product of an indium cylindrical target integrated with a backing tube; and subjecting the semi-finished product to plastic working in its radial direction, wherein the plastic working is performed with a total thickness reduction rate of at least 10% over its longitudinal direction.</p> |
申请公布号 |
KR20140054169(A) |
申请公布日期 |
2014.05.08 |
申请号 |
KR20147005767 |
申请日期 |
2013.01.31 |
申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
ENDO YOUSUKE;SUZUKI HIDEYUKI |
分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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