| 摘要 |
Provided are: an organic treatment solution for patterning chemically amplified resist films, which can reduce the generation of particles, particularly when using an organic developing solution in a negative pattern formation method for forming a fine (e.g. 30nm node or less) pattern; a container for the organic treatment solution for patterning chemically amplified resist films; and a pattern formation method, an electronic device manufacturing method, and an electronic device using the same. The organic treatment solution for patterning chemically amplified resist films contains 1ppm or less of an alkyl olefin having a carbon number of 22 or less, and has a metal element concentration of 5ppm or less for each of Na, K, Ca, Fe, Cu, Mg, Mn, Li, Al, Cr, Ni and Zn. The pattern formation method, the electronic device manufacturing method, and the electronic device use the same. |
