LOW-K DAMAGE FREE INTEGRATION SCHEME FOR COPPER INTERCONNECTS

摘要

A method includes forming a sacrificial layer on a substrate. A hard mask layer is formed on the sacrificial layer. The hard mask layer and the sacrificial layer are etched to form a first plurality of openings in the hard mask layer and the sacrificial layer. A low-k dielectric layer is deposited in the first plurality of openings. The hard mask layer and the sacrificial layer are thereafter removed leaving behind a plurality of low-k dielectric pillar structures having second plurality of openings therebetween. The second plurality of openings are then filled with a copper-containing layer.