| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polishing composition which suppresses contamination of a wafer due to metal impurities effectively.SOLUTION: A polishing composition suppresses contamination of a wafer due to metal impurities effectively. The polishing composition is used for polishing a silicon wafer in the first stage of rough polishing, the second stage of fine polishing, or the third stage of finish polishing. The polishing composition contains silicon dioxide, an alkali compound, and a chelate agent having a phosphonic acid group. Preferably, the average particle size of silicon dioxide obtained from the specific surface area is 5-300 nm.</p> |
