METHOD FOR DEPOSITING SILICON NITRIDE FILM AND DEPOSITION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for depositing a silicon nitride film capable of forming even a silicon nitride film containing much silicon with respect to SiNwithout spoiling workpiece in-plane uniformity of a film thickness.SOLUTION: A method for depositing a silicon nitride film comprises the steps of: (1) supplying a silicon material gas into a processing chamber; and (2) supplying a nitriding agent gas into the processing chamber. The step (1) further includes an initial stage of supplying the silicon material gas and a later stage of supplying the silicon material gas following the initial stage. In the initial stage of supplying the silicon material gas, a first pressure is the pressure in the processing chamber. In the later stage of supplying the silicon material gas, a second pressure lower than the first pressure is the pressure in the processing chamber.