| 摘要 |
<p>Provided is a highly reliable semiconductor device which exhibits excellent heat dissipation performance of a heat-generating element and solves the problem of decrease in the bonding strength between the heat-generating element and a substrate due to the stress caused by the thermal expansion difference between the heat-generating element and the substrate, said problem occurring when a film having a high heat conductivity is cooled after thermal curing and in the thermal history after assembling, and the problem of insufficient heat resistance of the film. A semiconductor device (1) which is provided with a heat-generating element (2), a heat-receiving device (3), and a highly heat conductive layer (4) that is arranged between the heat-generating element (2) and the heat-receiving device (3) in order to transfer heat from the heat-generating element (2) to the heat-receiving device (3). This semiconductor device (1) is characterized in that: the highly heat conductive layer (4) is a thermally cured product of a highly heat conductive film that contains (A) two or more kinds of thermosetting resins which contain a polyether compound having phenyl groups, to each of which at least a vinyl group having a specific structure is bonded, at both ends, (B) a thermoplastic elastomer, (C) a heat conductive inorganic filler and (D) a curing agent; and the highly heat conductive layer (4) has a thickness of 10-300μm.</p> |
