| 摘要 |
PROBLEM TO BE SOLVED: To improve a surface state of a photoresist film and etch an SiON film while maintaining a wall state on a pattern side of the improved photoresist film.SOLUTION: A plasma processing method comprises the steps of: improving a surface state of a photoresist film by performing plasma processing using a hydrogen-containing gas as a process gas (surface improvement processing step); and etching an SiON film by performing plasma processing with a process gas including a CHF-based containing gas and a chlorine-containing gas using the photoresist film in which the surface state thereof is improved as a mask (etching processing step). |
