发明名称 METHOD OF PATTERNING A LOW-K DIELECTRIC FILM
摘要 <p>Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.</p>
申请公布号 WO2014070619(A1) 申请公布日期 2014.05.08
申请号 WO2013US66953 申请日期 2013.10.25
申请人 APPLIED MATERIALS, INC. 发明人 NEMANI, SRINIVAS, D.;PENDER, JEREMIAH, T.;ZHOU, QINGJUN;LUBOMIRSKY, DMITRY;BELOSTOTSKIY, SERGEY, G.
分类号 H01L21/31;H01L21/3065 主分类号 H01L21/31
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