发明名称 |
METHOD OF PATTERNING A LOW-K DIELECTRIC FILM |
摘要 |
<p>Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.</p> |
申请公布号 |
WO2014070619(A1) |
申请公布日期 |
2014.05.08 |
申请号 |
WO2013US66953 |
申请日期 |
2013.10.25 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NEMANI, SRINIVAS, D.;PENDER, JEREMIAH, T.;ZHOU, QINGJUN;LUBOMIRSKY, DMITRY;BELOSTOTSKIY, SERGEY, G. |
分类号 |
H01L21/31;H01L21/3065 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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