| 摘要 |
PROBLEM TO BE SOLVED: To achieve good transmission characteristics of a signal across a wide band.SOLUTION: A semiconductor device (100) of the present embodiment comprises: a semiconductor chip (2); a plurality of external terminals (3); and a substrate (1). The substrate includes a first principal surface (1a) on which a plurality of first electrodes (7) electrically connected with the semiconductor chip are formed; a second principal surface (1b) on which a plurality of second electrodes (8) electrically connected with the plurality of external terminals are formed; and a plurality of wiring layers (LW1-LWn) which are formed between the first principal surface and the second principal surface and which form a plurality of signal paths for electrically connecting the first electrodes with the corresponding second electrodes. The wiring layer includes a plurality of metal components (12, 21, 45, 53_1-53_4) arranged in a dispersed manner at the periphery of a part where a structure of interconnections for forming the signal paths changes at intervals shorter than an electromagnetic wavelength (λ) corresponding to a signal band of a signal supplied to the signal paths. |
