| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for removing a SiN film using a novel etching material.SOLUTION: A method for removing a SiN film includes the steps of: coating an etching material on a silicon nitride (SiN) film by means of a printing method, the etching material containing at least one boron compound selected from among a Lewis acid containing, in the structure thereof, boron and halogen bonded to the boron, a salt of the Lewis acid, and a compound generating the Lewis acid; and removing the SiN film by heating. |
