| 摘要 |
An (Al,In,B,Ga)N or III-nitride based laser diode epitaxially grown on orientations other than a c-plane orientation, namely various semipolar and nonpolar orientations, and having polished facets. The semipolar orientation may be a semipolar (11-22), (11-2-2), (101-1), (10-1-1), (20-21), (20-2-1), (30-31) or (30-3-1) orientation, and the nonpolar orientation may be a nonpolar (10-10) or (11-20) orientation. The facets are chemically mechanically or mechanically polished. |
