发明名称 |
SINGLE-LEVEL CELL ENDURANCE IMPROVEMENT WITH PRE-DEFINED BLOCKS |
摘要 |
Techniques are disclosed for SLC blocks having different characteristics than MLC blocks such that SLC blocks will have high endurance and MLC blocks will have high reliability. A thinner tunnel oxide may be used for memory cells in SLC blocks than for memory cells in MLC blocks. A thinner tunnel oxide in SLC blocks may allow a lower program voltage to be used, which may improve endurance. A thicker tunnel oxide in MLC blocks may improve data retention. A thinner IPD may be used for memory cells in SLC blocks than for memory cells in MLC blocks. A thinner IPD may provide a higher coupling ratio, which may allow a lower program voltage. A lower program voltage in SLC blocks can improve endurance. A thicker IPD in MLC blocks can prevent or reduce read disturb. SLC blocks may have a different number of data word lines than MLC blocks. |
申请公布号 |
US2014126286(A1) |
申请公布日期 |
2014.05.08 |
申请号 |
US201213668160 |
申请日期 |
2012.11.02 |
申请人 |
SANDISK TECHNOLOGIES INC. |
发明人 |
HIGASHITANI MASAAKI;DUNGA MOHAN;YUAN JIAHUI |
分类号 |
G11C16/06;G11C16/04;H01L21/20;H01L21/336 |
主分类号 |
G11C16/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|