| 摘要 |
Polysilicon diodes fabricated in standard CMOS logic processes can be used as program selectors for One-Time Programmable (OTP) devices, using electrical fuse, contact/via fuse, contact/via anti-fuse, or gate-oxide breakdown anti-fuse etc. as OTP element The diode can be constructed by P+/N+ implants on a polysilicon as a program selector. The OTP device can have an OTP element coupled to a polysilicon diode. The OTP devices can be used to construct a two-dimensional OTP memory with the N-terminals of the diodes in a row connected as a wordline and the OTP elements in a column connected as a bitline. |
