发明名称 NANOGAP DEVICE AND METHOD OF PROCESSING SIGNAL FROM THE NANOGAP DEVICE
摘要 A nanogap device which may include a first insulation layer having a nanopore formed therein, a first channel layer which may be on the first insulation layer, a first source electrode and a first drain electrode which may be respectively in contact with both ends of the first channel layer, a second insulation layer which may cover the first channel layer, the first source electrode, and the first drain electrode, and a first nanogap electrode which may be on the second insulation layer and may be divided into two parts with a nanogap, which faces the nanopore, interposed between the two parts.
申请公布号 US2014125322(A1) 申请公布日期 2014.05.08
申请号 US201313855991 申请日期 2013.04.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE CHANG-SEUNG;KIM YONG-SUNG;SHIM JEO-YOUNG;LEE JOO-HO
分类号 H01L29/78;G01R19/00 主分类号 H01L29/78
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