SELF-POWERED GATE DRIVE CIRCUIT APPARATUS AND METHOD

摘要

A self-powered gate drive circuit (22) comprising: a first capacitor (C) electrically coupled to a power semiconductor collector node of the circuit; a first switch (sw1) arranged between the first capacitor (C) and a second capacitor (Cs), the first switch (sw1) electrically coupling the first and second capacitors when switched on; the second capacitor (Cs); a first diode (D1), the first diode anode electrically coupled to the first capacitor (C) and the first diode cathode electrically coupled to the first switch (sw1); a second diode (D2), the second diode cathode electrically coupled to the first capacitor (Cs)and the second diode anode electrically coupled with a ground node of the circuit (22); and a second switch (sw2), wherein the second switch electrically couples the second capacitor (Cs) with a power semiconductor gate node (G) when switched on.