| 摘要 |
<p>The present invention suppresses influence of stress, which is applied from a capacitance insulating film, without deteriorating electrical characteristics of a capacitor, said capacitance insulating film being formed on the surface of a beam that connects lower electrodes to each other. In this semiconductor device manufacturing method, a stopper film, a sacrifice film, and a beam configuration material film are formed by laminating the films in this order on a semiconductor substrate. A cylinder hole that penetrates the stopper film, the sacrifice film, and the beam configuration material film is formed, and a lower electrode that covers the inner surface of the cylinder hole is formed. The beam configuration material film is patterned so as to form a beam that is connected to at least a part of the outer circumferential surface of the lower electrode, thereby exposing a part of the sacrifice film. The sacrifice film is removed by wet etching, and a hollow is formed in the surface of the beam, said hollow being deeper than a hollow formed in the surface of the stopper film.</p> |
