发明名称 DUAL GATE FINFET DEVICES
摘要 <p>A method comprises: forming a first array of fins and a second array of fins on a substrate; masking off the first array of fins from the second array of fins with a first mask; depositing a dielectric layer on the second array of fins and on the first mask on the first array of fins; masking off the dielectric layer deposited on the second array of fins with a second mask; removing the dielectric layer and the first mask from the first array of fins; removing the second mask from the second array of fins to expose the dielectric layer on the second array of fins; and depositing a chemox layer on the first array of fins. The chemox layer is thinner than the dielectric layer on the second array of fins.</p>
申请公布号 WO2014067692(A1) 申请公布日期 2014.05.08
申请号 WO2013EP67729 申请日期 2013.08.27
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED 发明人 YAMASHITA, TENKO;BASKER, VEERARAGHAVAN;LEOBANDUNG, EFFENDI
分类号 H01L21/8234;H01L21/8238;H01L27/088 主分类号 H01L21/8234
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