BIPOLAR JUNCTION TRANSISTOR AND METHOD FOR MANUFACTURING THEREOF

摘要

A bipolar junction transistor according to an embodiment of the present invention comprises a semiconductor substrate; a first well formed by injecting a first impurity into the substrate; a second well formed at one side of the first well by injecting a second impurity; a first element separation film formed in the first well; a second element separation film formed in the second well; an emitter formed by injecting the second impurity into one side of the first element separation film within the first well and being in contact with an electrode; a base formed by injecting the first impurity into the other side of the first element separation film and one side of the emitter within the first well and being in contact with the electrode; a collector formed by injecting the second impurity into one side of the second element separation film within the second well and being in contact with the electrode; and a high concentration doping region formed by injecting the second impurity on one side of the collector within the second well.