| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving a trade-off relation between autodoping and alignment mark shape collapse, and that has a high productivity.SOLUTION: First to sixth epitaxial layers 2-1 to 2-6 are sequentially grown on an Si {100} principal plane of an arsenic-doped substrate 1 by a multistage epitaxial system. An epitaxial growth condition for the first to sixth epitaxial layers 2-1 to 2-6 is that an epitaxial growth temperature is 1150-1180°C and an epitaxial growth speed is 2.2-2.6 μm/min, under a normal pressure atmosphere. To the arsenic-doped substrate 1, a concave alignment mark whose bottom face is an Si {100} plane is formed. For each time when the first to sixth epitaxial layers 2-1 to 2-6 are grown on the principal surface of the arsenic-doped substrate 1, concave alignment marks 3-1 to 3-6 formed by deformation of an upper part of the alignment mark of the lower layer are formed to the epitaxial layer of the uppermost surface layer. |
