| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce cell area in a nonvolatile storage device.SOLUTION: The nonvolatile storage device includes: a first wiring on the first plane; a second wiring extending in a direction crossing the first wiring on a second plane; a third wiring extending parallel with the second wiring on the fourth plane; and a memory cell disposed at a grade separated point of the first wiring and the third wiring. The memory cell includes a transistor and a resistance change element. The transistor includes a first main electrode, a second main electrode, and a control electrode. The resistance change element is formed on the third plane and includes a lower electrode, an upper electrode, and a resistance change layer. The upper electrode is connected to the third wiring and includes: a first contact plug that extends from the first main electrode to the second plane and is connected to the second wiring; a second contact plug that extends from the second main electrode to the second plane; and a third contact plug that extends from the second contact plug and is connected to the lower electrode. The second contact plug and the third contact plug connect the second main electrode to the lower electrode.</p> |
