| 摘要 |
An electrical contact is formed on a III-V semiconductor comprising gallium. The contact is formed by depositing a first layer comprising In, Au, and a dopant on the surface of a III-V semiconductor and a second layer comprising a conductive oxide on the first layer. The deposited layers are annealed in an inert atmosphere. The annealing causes the formation of a Ga—Au compound at the interface between the III-V semiconductor and the first layer. At least a portion of the dopant migrates into the III-V semiconductor such that the dopant provides n-type or p-type conductivity to the III-V semiconductor. The specific contact resistivity between the III-V semiconductor and the second layer is less than about 10−5Ωcm2. The layers are further annealed in an oxidizing atmosphere such that the indium in the first layer is oxidized to form indium oxide. |
