LIGHT EMITTING DEVICE HAVING REFLECTIVE ELECTRODE

摘要

A light emitting device comprises: a semiconductor structure comprising multiple semiconductor layers, a light emitting layer being between the semiconductor layers; at least one electrode comprising a reflective layer (35), and having a contact surface with at least one semiconductor layer (31) of the semiconductor structure. When a forward bias is applied to the light emitting device, a current flows from a side surface of the reflective layer (35) into the reflective layer (35), so that the contact surface produces a potential gradient, so as to suppress electromigration of metal in the electrode, thereby improving stability of the device.