SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

A method for manufacturing a semiconductor light emitting device according to the embodiment of the present invention includes the steps of: preparing a substrate for growing a single crystal for a semiconductor; forming an isolation pattern to define a unit chip area on the substrate for growing the single crystal for the semiconductor; forming a light emitting structure which is lower than the isolation pattern by successively forming a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the region of the substrate for growing the single crystal for the semiconductor defined by the isolation pattern; forming a reflective metal layer to cover the isolation pattern and the light emitting structure; forming a support substrate on the reflective metal layer; removing the substrate for growing the single crystal for the semiconductor; and cutting the support substrate into individual light emitting devices.