| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plasma processing method for a plasma processing device.SOLUTION: A plasma processing device includes a reaction chamber including a base, and multiple RF power supplies with different RF frequency outputs apply RF electric fields to the reaction chamber, and the output of at least one pulse RF power supply among the multiple RF power supplies has multiple output states. A processing method includes a matching frequency obtaining step and a pulse processing step. In the matching frequency obtaining step, an output state of the pulse RF power supply is switched to make the reaction chamber have multiple impedances appearing in the pulse processing step. The output frequencies of a variable-frequency RF power supply are adjusted to match the impedances which have appeared. The output frequencies after tuning are stored as matching frequencies. In the subsequent pulse processing step, the matching impedances are switched at a high speed by the stored matching frequencies.</p> |
