| 摘要 |
<p>PROBLEM TO BE SOLVED: To reduce on-resistance.SOLUTION: In a silicon carbide semiconductor device, a side wall of a trench includes a channel face CH having a lengthwise direction DL. The channel face CH is formed such that first and second belt-like faces T1, T2 having microscopic dimensions in first and second directions DC1, DC2 which cross the lengthwise direction DL are microscopically repeated in a third direction DW which crosses the lengthwise direction DL. The respective first and second belt-like faces T1, T2 include first and second microscopic faces. An orientation of each of the frist and second microscopic faces is included in {0-3, 3-8}.</p> |
