发明名称 |
METHOD OF MAKING A SEMICONDUCTOR DEVICE INCLUDING BARRIER LAYERS FOR COPPER INTERCONNECT |
摘要 |
A method of making a semiconductor device includes forming a dielectric layer over a semiconductor substrate. The method further includes forming a copper-containing layer in the dielectric layer, wherein the copper-containing layer has a first portion and a second portion. The method further includes forming a first barrier layer between the first portion of the copper-containing layer and the dielectric layer. The method further includes forming a second barrier layer at a boundary between the second portion of the copper-containing layer and the dielectric layer wherein the second barrier layer is adjacent to an exposed portion of the dielectric layer. The first barrier layer is a dielectric layer, and the second barrier layer is a metal oxide layer, and a boundary between a sidewall of the copper-containing layer and the first barrier layer is free of the second barrier layer. |
申请公布号 |
US2014127898(A1) |
申请公布日期 |
2014.05.08 |
申请号 |
US201414151857 |
申请日期 |
2014.01.10 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU NAI-WEI;WU ZHEN-CHENG;HUANG CHENG-LIN;HUANG PO-HSIANG;WANG YUNG-CHIH;SU SHU-HUI;CHEN DIAN-HAU;MII YUH-JIER |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|