发明名称 METHOD FOR MODIFYING AN INITIAL STRESS STATE OF AN ACTIVE LAYER TO A FINAL STRESS STATE
摘要 This method comprises the steps of a) providing a first substrate (1) comprising the active layer (10) made from a first material with Young's modulus E1, and thickness h1; b) providing a second substrate (2) made from a second material with Young's modulus E2, and thickness h2, c) bending the first substrate (1) and the second substrate (2) in such a way that each has an arched shape having radius of curvature R; d) assembling the second substrate (2) to the active layer (10) in such a way that the second substrate (2) conforms to the shape of the first substrate (1 ); e) restoring the initial shape, at rest, of the second substrate (2), the method being remarkable in that the second material of the second substrate (2) is a flexible material that satisfies the equation E2/E1 < 10-2, in that the thickness of the second substrate (2) satisfies the equation h2/h1&ge; 104, and in that the radius of curvature satisfies the equation R = h2/2&egr;.
申请公布号 WO2014068377(A1) 申请公布日期 2014.05.08
申请号 WO2013IB02292 申请日期 2013.10.11
申请人 SOITEC 发明人 LE VAILLANT, YVES-MATTHIEU;NAVARRO, ETIENNE
分类号 H01L21/20 主分类号 H01L21/20
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